Photoelectrical properties of layered GaS single crystals and related structures

被引：4
作者：
Caraman, M. [2 ]
Chiricenco, V. [3 ]
Leontie, L. [1 ]
Rusu, I. I. [2 ]
机构：
[1] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania
[2] Bacau Univ, Bacau 600115, Romania
[3] Moldova State Univ, Kishinev 2009, MD, Moldova
来源：
MATERIALS RESEARCH BULLETIN | 2008年 / 43卷 / 12期
关键词：
Layered compounds; Semiconductors; Crystal growth; Electrical properties;
D O I：
10.1016/j.materresbull.2008.04.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoconductivity of pure and Cu-doped layered gallium monosulfide (GaS) single crystals, and of Ni-GaS(Cu)-In and GaS(Cu)-ZnO structures, is investigated. The activation energies of surface states were found as 0.10 eV, 0.40 eV and 17 meV, similar to 400 meV for GaS and GaS(Cu), respectively. Cu acceptor levels are localized at 0.44 eV and 0.52 eV above the valence band of GaS. ZnO-GaS(Cu) heterojunctions show remarkable photosensitivity in the wavelength range of 250-700 nm. (c) 2008 Elsevier Ltd. All rights reserved.
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页码：3195 / 3201
页数：7
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