Wet chemically prepared silicon nanowire arrays on low-cost substrates for photovoltaic applications

被引：9

作者：

Jia, Guobin ^{[1
]}

Hoeger, Ingmar ^{[1
]}

Gawlik, Annett ^{[1
]}

Dellith, Jan ^{[1
]}

Bailey, Louise R. ^{[2
]}

Ulyashin, Alexander ^{[3
]}

Falk, Fritz ^{[1
]}

机构：

[1] Inst Photon Technol, D-07745 Jena, Germany

[2] Oxford Instruments Plasma Technol, Bristol BS49 4AP, Avon, England

[3] Stiftelsen Ind & Teknisk Forskning, N-0314 Oslo, Norway

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 04期

关键词：

a-Si; coreshell; etching; hetero-emitter; light trapping; low-cost mc-Si; silicon nanowires; solar cell; SOLAR-CELLS; MULTICRYSTALLINE; EFFICIENCY;

D O I：

10.1002/pssa.201200531

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nanowire (SiNW) based solar cells are a promising candidate for third generation solar cells with high efficiency, which will further reduce the cost of the PV modules, making it competitive with conventional energy sources. In this paper the wet chemical etching process for generating silicon nanowires is investigated on different low-cost substrate materials. These nanowires are useful for a radial pn-junction solar cell with coreshell configuration, which allows for using absorber materials with low-carrier lifetime. In this work, wet chemical nanowire etching is applied to edge-defined film-fed growth (EFG) mc-Si wafers, mc-Si wafers made from metallurgical grade Si, multicrystalline (mc-Si) thin films deposited on glass, and thin crystallized films deposited on mc-Si wafers produced from metallurgical grade Si. A proof of concept for using low-cost materials in PV is demonstrated for SiNWs prepared on mc-Si wafer produced from highly doped MG-Si.

引用

页码：728 / 731

页数：4

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