Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green's Function-Drift-Diffusion Approach

被引:8
|
作者
Tibaldi, Alberto [1 ,2 ]
Montoya, Jesus A. Gonzalez [1 ]
Alasio, Matteo G. C. [1 ]
Gullino, Alberto [1 ]
Larsson, Anders [3 ]
Debernardi, Pierluigi [2 ]
Goano, Michele [1 ,2 ]
Vallone, Marco [1 ]
Ghione, Giovanni [1 ]
Bellotti, Enrico [4 ]
Bertazzi, Francesco [1 ,2 ]
机构
[1] Politecn Torino, Dept Elect & Telecommun, I-10129 Turin, Italy
[2] Consiglio Nazl Ric CNR, Ist Elettron & Ingn Informaz & Telecomunicaz IEII, I-10129 Turin, Italy
[3] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[4] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
关键词
QUANTUM; SIMULATION; MODEL; TRANSMISSION; VCSELS;
D O I
10.1103/PhysRevApplied.14.024037
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach, where tunneling is described rigorously with a nonequilibrium Green's function formalism based on a multiband description of the electronic structure. Validated with experimental results, the proposed approach provides a quantum -kinetic perspective of the tunneling process and paves the way toward a comprehensive theory of VCSELs, bridging the gap between semiclassical and quantum simulations.
引用
收藏
页数:10
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