Interaction-Induced Huge Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

被引：1

作者：

Bockhorn, L. ^{[1
]}

Gornyi, I. V. ^{[2
]}

Schuh, D. ^{[3
]}

Wegscheider, W.

Haug, R. J. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany

[3] Univ Regensburg, Inst Experimentelle & Angewandte Phys, D-93053 Regensburg, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Fractional Quantum Hall Effect; Negative Magnetoresistance; Electron Interaction Correction;

D O I：

10.1063/1.4848399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.

引用

页码：289 / +

页数：2