Interaction-Induced Huge Magnetoresistance in a High Mobility Two-Dimensional Electron Gas

被引：1
|
作者：
Bockhorn, L. [1 ]
Gornyi, I. V. [2 ]
Schuh, D. [3 ]
Wegscheider, W.
Haug, R. J. [1 ]
机构：
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[3] Univ Regensburg, Inst Experimentelle & Angewandte Phys, D-93053 Regensburg, Germany
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
Fractional Quantum Hall Effect; Negative Magnetoresistance; Electron Interaction Correction;
D O I：
10.1063/1.4848399
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
引用
收藏
页码：289 / +
页数：2
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