Self-Cleaning and Electrical Characteristics of ZrO2 (HfO2)/GaAs MOS Capacitor Fabricated by Atomic Layer Deposition

被引：1

作者：

White, Curtis ^{[1
,2
]}

Donovan, Thomas ^{[1
,2
]}

Cashwell, Irving ^{[1
,2
]}

Konda, R. B. ^{[1
,2
]}

Sahu, D. R. ^{[3
]}

Xiao, Bo ^{[1
,2
]}

Bahoura, M. ^{[1
,2
]}

Pradhan, A. K. ^{[1
,2
]}

机构：

[1] Norfolk State Univ, Dept Engn, Norfolk, VA 23504 USA

[2] Norfolk State Univ, Ctr Mat Res, Norfolk, VA 23504 USA

[3] Univ Witwatersrand, Sch Phys, Johannesburg, South Africa

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 9 | 2013年 / 58卷 / 10期

关键词：

GAAS; PASSIVATION;

D O I：

10.1149/05810.0325ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The reduction of native oxides on GaAs substrates is studied by short time pulsing of the metal precursor for self-cleaning mechanism using atomic layer deposition (ALD) of Trimethyl aluminum (TMA). The short time pulsing of the TMA is effective for self-cleaning mechanism to reduce the GaAs native oxides. X-ray photoelectron studies demonstrated that the pulsed deposition of TMA in the range of 2 to 4s is the most effective way of cleaning the GaAs native oxides. Microscopic studies clearly demonstrate the sharp interface between dielectric/GaAs. GaAs based metal oxide semiconductor (MOS) capacitors were fabricated with ZrO2 and HfO2 gate dielectrics using ALD. The effect of growth temperature of dielectric films on GaAs was studied. The as deposited samples have a significant amount of fixed charge in the bulk of the gate dielectric and at dielectric/semiconductor (ZrO2 or HfO2/GaAs) interface, which causes the flat band shift and frequency dispersion.

引用

页码：325 / 333

页数：9

共 16 条

[11] Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces
Milojevic, M.
Hinkle, C. L.
Aguirre-Tostado, F. S.
Kim, H. C.
Vogel, E. M.
Kim, J.
Wallace, R. M.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (25)
[12] GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric:: Fabrication and characterization
Shahrjerdi, D.
Garcia-Gutierrez, D. I.
Akyol, T.
Bank, S. R.
Tutuc, E.
Lee, J. C.
Banerjee, S. K.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (19)
[13] Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
Suri, Rahul
Lichtenwalner, Daniel J.
Misra, Veena
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (11)
[14] Simplified surface preparation for GaAs passivation using atomic layer-deposited high-κ dielectrics
Xuan, Yi
Lin, Hung-Chun
Ye, Peide D.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (08) : 1811 - 1817
[15] Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
Ye, PD
Wilk, GD
Yang, B
Kwo, J
Gossmann, HJL
Hong, M
Ng, KK
Bude, J
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (03) : 434 - 436
[16] A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices
Yuan, Yu
Wang, Lingquan
Yu, Bo
Shin, Byungha
Ahn, Jaesoo
McIntyre, Paul C.
Asbeck, Peter M.
Rodwell, Mark J. W.
Taur, Yuan
[J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (04) : 485 - 487

← 1 2 →