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Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films
被引:51
作者:
Jenderka, Marcus
[1
]
Barzola-Quiquia, Jose
[1
]
Zhang, Zhipeng
[1
]
Frenzel, Heiko
[1
]
Grundmann, Marius
[1
]
Lorenz, Michael
[1
]
机构:
[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany
来源:
PHYSICAL REVIEW B
|
2013年
/
88卷
/
04期
关键词:
SPIN-ORBIT INTERACTION;
QUANTUM COMPUTATION;
LOCALIZATION;
SR2IRO4;
MAGNETORESISTANCE;
RESISTIVITY;
TRANSITION;
CONDUCTION;
CRYSTALS;
ANYONS;
D O I:
10.1103/PhysRevB.88.045111
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Iridate thin films are a prerequisite for any application utilizing their cooperative effects resulting from the interplay of strong spin-orbit coupling and electronic correlations. Here, heteroepitaxial Na2IrO3 thin films with (001) out-of-plane crystalline orientation and well-defined in-plane epitaxial relationship are presented on various oxide substrates. Resistivity is dominated by a three-dimensional variable-range hopping mechanism in a large temperature range between 300 K and 40 K. Optical experiments show the onset of a small optical gap E-go approximate to 200 meV and a splitting of the Ir 5d-t(2g) manifold. Positive magnetoresistance below 3 T and 25 K shows signatures of a weak antilocalization effect.
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