Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films

被引:50
作者
Jenderka, Marcus [1 ]
Barzola-Quiquia, Jose [1 ]
Zhang, Zhipeng [1 ]
Frenzel, Heiko [1 ]
Grundmann, Marius [1 ]
Lorenz, Michael [1 ]
机构
[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany
来源
PHYSICAL REVIEW B | 2013年 / 88卷 / 04期
关键词
SPIN-ORBIT INTERACTION; QUANTUM COMPUTATION; LOCALIZATION; SR2IRO4; MAGNETORESISTANCE; RESISTIVITY; TRANSITION; CONDUCTION; CRYSTALS; ANYONS;
D O I
10.1103/PhysRevB.88.045111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Iridate thin films are a prerequisite for any application utilizing their cooperative effects resulting from the interplay of strong spin-orbit coupling and electronic correlations. Here, heteroepitaxial Na2IrO3 thin films with (001) out-of-plane crystalline orientation and well-defined in-plane epitaxial relationship are presented on various oxide substrates. Resistivity is dominated by a three-dimensional variable-range hopping mechanism in a large temperature range between 300 K and 40 K. Optical experiments show the onset of a small optical gap E-go approximate to 200 meV and a splitting of the Ir 5d-t(2g) manifold. Positive magnetoresistance below 3 T and 25 K shows signatures of a weak antilocalization effect.
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页数:6
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