Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy

被引：24
|
作者：
Nam, S
Rhee, J
O, BS
Lee, KS
Choi, YD
Jeon, GN
Lee, CH
机构：
[1] CHUNGNAM NATL UNIV,DEPT PHYS,TAEJON 305764,SOUTH KOREA
[2] MOKWON UNIV,DEPT PHYS,TAEJON 301729,SOUTH KOREA
[3] JEONBUK NATL UNIV,DEPT PHYS,JEONJU 561756,SOUTH KOREA
[4] JEONBUK NATL UNIV,SEMICOND PHYS RES CTR,JEONJU 561756,SOUTH KOREA
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 180卷 / 01期
关键词：
hot-wall epitaxy; ZnTe; pre-heating; DCRC; photoluminescence;
D O I：
10.1016/S0022-0248(97)00193-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
ZnTe epilayers of high quality have been grown by hot-wall epitaxy and their characteristics have been investigated. By Rutherford backscattering, the atomic ratio of Zn:Te in the epilayers was found to be almost constant over the wide range of the growth temperature. It was found that the quality of the films depended on the pre-heating temperature. The best Value of the FWHM of the double crystal rocking curve, 93 arcsec, was obtained at the pre-heating temperature of 590-610 degrees C. The PL spectrum with the strong free exciton peaks and no oxygen-bound exciton peaks showed the high quality of the films. From the PL spectrum and the lattice constants, it could be concluded that a tensile strain remained in the ZnTe/GaAs epilayers.
引用
收藏
页码：47 / 53
页数：7
相关论文
共 50 条
  • [1] Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy
    Chungnam Natl Univ, Taejon, Korea, Republic of
    J Cryst Growth, 1 (47-53):
  • [2] Characterization and growth of ZnSTe epilayers by hot-wall epitaxy
    Yu, YM
    Nam, S
    Rhee, JK
    O, B
    Lee, KS
    Choi, YD
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 521 - 526
  • [3] Resonance Raman scattering in high-quality ZnTe epilayers grown by hot-wall epitaxy
    Nam, S
    Rhee, J
    O, BS
    Lee, KS
    Choi, YD
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 (01) : 82 - 86
  • [4] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY CDTE EPILAYERS ON GAAS SUBSTRATES BY HOT-WALL EPITAXY
    SITTER, H
    LISCHKA, K
    FASCHINGER, W
    WOLFRUM, J
    PASCHER, H
    PAUTRAT, JL
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 377 - 381
  • [5] Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy
    Yu, Y. -M.
    Kim, D-J
    Choi, Y. D.
    Kim, C. -S.
    APPLIED SURFACE SCIENCE, 2007, 253 (07) : 3521 - 3524
  • [6] Growth of CdTe islands on ZnTe by hot-wall epitaxy
    Kuwabara, H
    Unno, A
    Kouga, K
    Watanabe, T
    Tomoda, W
    Nakanishi, Y
    Tatsuoka, H
    APPLIED SURFACE SCIENCE, 2001, 175 : 643 - 648
  • [7] PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ZNTE/GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY
    KUDLEK, G
    PRESSER, N
    GUTOWSKI, J
    HINGERL, K
    ABRAMOF, E
    SITTER, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) : A90 - A95
  • [8] HIGH-QUALITY CDTE EPILAYERS ON GAAS GROWN BY HOT-WALL EPITAXY
    SCHIKORA, D
    SITTER, H
    HUMENBERGER, J
    LISCHKA, K
    APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1276 - 1278
  • [9] Growth and evaluation of high-quality ZnTe/GaAs by hot wall epitaxy
    Kim, BJ
    Wang, JF
    Ishikawa, Y
    Sato, S
    Isshiki, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 191 (01): : 161 - 168
  • [10] Preparation of CdTe quantum structures on ZnTe by hot-wall epitaxy
    Kouga, K
    Yoneyama, R
    Kuwabara, H
    Watanabe, T
    Tomoda, W
    Tatsuoka, Y
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (01): : 149 - 153
12345