Microscopic scale characterization and modeling of transistor degradation under HC stress

被引：48
作者：
Randriamihaja, Yoann Mamy [1 ,2 ]
Huard, V. [1 ]
Federspiel, X. [1 ]
Zaka, A. [1 ,3 ]
Palestri, P. [3 ]
Rideau, D. [1 ]
Roy, D. [1 ]
Bravaix, A. [2 ]
机构：
[1] Crolles2 Alliance, STMicroelect, F-38926 Crolles, France
[2] UMR CNRS 6137, IM2NP, ISEN, F-83000 Toulon, France
[3] Univ Udine, DIEGM, I-33100 Udine, Italy
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 11期
关键词：
DISSOCIATION; ENERGETICS;
D O I：
10.1016/j.microrel.2012.04.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a theoretical framework about interface states creation rate from Si H bond breaking at the Si/SiO2 interface during Hot Carrier (HC) stress. It involves two mains mechanisms of bond breaking through incident carriers, either being very energetic or very numerous but less energetic. This concept allows physical modeling of the reliability of MOS transistors, for different HC stress conditions. Simulation is validated by measurement of both defect lateral profiles and degradation of MOS parameters. This poses a general framework for the study of HC degradation at defect level. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2513 / 2520
页数：8
相关论文
共 24 条
[1]  
[Anonymous], 2010, SDEVICE E 2010 12 SY
[2]  
Ashcroft N., 2011, Solid State Physics
[3]   Enhanced stability of deuterium in silicon [J].
Biswas, R ;
Li, YP ;
Pan, BC .
APPLIED PHYSICS LETTERS, 1998, 72 (26) :3500-3502
[4]   Determination of threshold energy for hot electron interface state generation [J].
Bude, JD ;
Iizuka, T ;
Kamakura, Y .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :865-868
[5]  
Guerin C, 2009, J APPL PHYS, V79, P105
[6]  
Huard V, 2011, IEEE INT RELIAB PHYS
[7]  
Iellina M, 2010, TRANS ELECT DEV, P57
[8]  
Kaneta C, 2003, FUJITSU SCI TECH J, V39, P106
[9]  
Lee R, 1996, TRANS ELECT DEV, P43
[10]  
Mamy Randriamihaja Y, 2010, INT RELIAB WORKSHOP
123