Electrical and thermal conductivities of the graphene, boron nitride and silicon boron honeycomb monolayers

被引：11

作者：

Mousavi, Hamze ^{[1
]}

Khodadadi, Jabbar ^{[1
]}

Kurdestany, Jamshid Moradi ^{[2
]}

Yarmohammadi, Zahra ^{[1
]}

机构：

[1] Razi Univ, Dept Phys, Kermanshah, Iran

[2] Univ Missouri, Dept Phys & Astron, Columbia, MO 65201 USA

来源：

PHYSICS LETTERS A | 2016年 / 380卷 / 45期

关键词：

Graphene; Silicon boron; Boron nitride; Tight-binding; Green's function; TIGHT-BINDING MODEL; CARBON NANOTUBES; GAS; NANORIBBONS; RESISTIVITY;

D O I：

10.1016/j.physleta.2016.09.043

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Density of states, electrical and thermal conductivities of electrons in graphene, boron nitride and silicon boron single sheets are studied within the tight-binding Hamiltonian model and Green's function formalism, based on the linear response theory. The results show that while boron nitride keeps significantly the lowest amounts overall with an interval of zero value in low temperatures, due to its insulating nature, graphene exhibits the most electrical and thermal conductivities, slightly higher than silicon boron except for low temperature region where the latter surpasses, owing to its metallic character. This work might make ideas for creating new electronic devices based on honeycomb nanostructures. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：3823 / 3827

页数：5

共 36 条

[11] First-principles study of the optical properties of BeO in its ambient and high-pressure phases [J].