Etch characteristics of HfO2 thin films by using CF4/Ar inductively coupled plasma

被引：12

作者：

Kang, Pil-Seung ^{[1
]}

Woo, Jong-Chang ^{[1
]}

Joo, Young-Hee ^{[1
]}

Kim, Chang-Il ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

来源：

VACUUM | 2013年 / 93卷

关键词：

Etching; HfO2; XPS; ICP; CF4; PHOTOELECTRON-SPECTROSCOPIC ANALYSIS; HIGH-K; ELECTRODES; STABILITY; RATIO;

D O I：

10.1016/j.vacuum.2012.12.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity) of HfO2 thin films in the CF4/Ar inductively coupled plasma (ICP). The maximum etch rate of 54.48 nm/min for HfO2 thin films was obtained at CF4/Ar (=20:80%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as ICP RF power, DC-bias voltage, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the chemical reaction was proposed as the main etch mechanism for the CF4-containing plasmas. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：50 / 55

页数：6

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