Comparison of optical VCSEL models on the simulation of oxide-confined devices

被引:83
作者
Bienstman, P [1 ]
Baets, R
Vukusic, J
Larsson, A
Noble, MJ
Brunner, M
Gulden, K
Debernardi, P
Fratta, L
Bava, GP
Wenzel, H
Klein, B
Conradi, O
Pregla, R
Riyopoulos, SA
Seurin, JPP
Chuang, SL
机构
[1] Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium
[2] Chalmers, Dept Microelect, Photon Lab, SE-41296 Gothenburg, Sweden
[3] Chalmers, Microtechnol Ctr MC2, SE-41296 Gothenburg, Sweden
[4] USAF, Res Lab, Sensors Directorate, SNHC, Hanscom AFB, MA 01731 USA
[5] Avalon Photon Ltd, CH-8048 Zurich, Switzerland
[6] Politecn Torino, Dipartimento Elettron, CNR, IRITI, I-10129 Turin, Italy
[7] Politecn Torino, INFM, I-10129 Turin, Italy
[8] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
[9] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
[10] Fern Univ Hagen, D-58084 Hagen, Germany
[11] Sci Applicat Int Corp, Mclean, VA 22102 USA
[12] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[13] Princeton Optron, Princeton, NJ 08543 USA
基金
美国国家科学基金会;
关键词
distributed Bragg reflector lasers; laser modes; semiconductor device modeling; semiconductor lasers; surface-emitting lasers;
D O I
10.1109/3.970909
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We compare the results of different optical vertical-cavity surface-emitting laser models on the position-dependent effects of thin oxide apertures. Both scalar and vectorial models as well as hybrid models are considered. Physical quantities that are compared are resonance wavelength, threshold material gain, and modal stability. For large device diameters and low-order modes, the agreement between the different models is quite good. Larger differences occur when considering smaller devices and higher order modes. It is also observed that the spread in the resonance wavelengths is smaller than that for the threshold material gain.
引用
收藏
页码:1618 / 1631
页数:14
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