Micro-Supercapacitors Based on Interdigital Electrodes of Reduced Graphene Oxide and Carbon Nanotube Composites with Ultrahigh Power Handling Performance

被引:768
|
作者
Beidaghi, Majid [1 ]
Wang, Chunlei [1 ]
机构
[1] Florida Int Univ, Dept Mech & Mat Engn, Miami, FL 33174 USA
关键词
micro-supercapacitors; graphene; high power handling; photolithography lift-off; electrostatic spray deposition; CARBIDE-DERIVED CARBON; GRAPHITE OXIDE; FILMS;
D O I
10.1002/adfm.201201292
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A novel method for fabricating micro-patterned interdigitated electrodes based on reduced graphene oxide (rGO) and carbon nanotube (CNT) composites for ultra-high power handling micro-supercapacitor application is reported. The binder-free microelectrodes were developed by combining electrostatic spray deposition (ESD) and photolithography lift-off methods. Without typically used thermal or chemical reduction, GO sheets are readily reduced to rGO during the ESD deposition. Electrochemical measurements show that the in-plane interdigital design of the microelectrodes is effective in increasing accessibility of electrolyte ions in-between stacked rGO sheets through an electro-activation process. Addition of CNTs results in reduced restacking of rGO sheets and improved energy and power density. Cyclic voltammetry (CV) measurements show that the specific capacitance of the micro-supercapacitor based on rGOCNT composites is 6.1 mF cm(-2) at 0.01 V s(-1). At a very high scan rate of 50 V s(-1), a specific capacitance of 2.8 mF cm(-2) (stack capacitance of 3.1 F cm(-3)) is recorded, which is an unprecedented performance for supercapacitors. The addition of CNT, electrolyte-accessible and binder-free microelectrodes, as well as an interdigitated in-plane design result in a high-frequency response of the micro-supercapacitors with resistive-capacitive time constants as low as 4.8 ms. These characteristics suggest that interdigitated rGOCNT composite electrodes are promising for on-chip energy storage application with high power demands.
引用
收藏
页码:4501 / 4510
页数:10
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