Measurement of plasma density for control of etching profile in inductively coupled plasma etching of InP

被引：6
作者：
Matsutani, A
Ohtsuki, H
Koyama, F
Iga, K
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Samco Int Inc, Fujimi Ku, Kyoto 6128443, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 5A期
关键词：
dry etching; inductively coupled plasma (ICP); mass spectrometry; double probe; InP; Cl-2;
D O I：
10.1143/JJAP.41.3147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effect of the plasma density on the control of the etching profile in an inductively coupled plasma (ICP) etching of InP. It was found that the total ion density is not a good measure of the control of the etching profile. We have to take into account the quantity of each ion for etching profile control. We suggest that the etching profile of InP can be controlled by the in situ monitoring of the quantity of Cl+ ions.
引用
收藏
页码：3147 / 3148
页数：2
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