Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films

被引：44

作者：

Brown, B. L. ^{[1
]}

Lee, Mark ^{[1
]}

Clem, P. G. ^{[2
]}

Nordquist, C. D. ^{[2
]}

Jordan, T. S. ^{[2
]}

Wolfley, S. L. ^{[2
]}

Leonhardt, D. ^{[2
]}

Edney, C. ^{[2
]}

Custer, J. A. ^{[2
]}

机构：

[1] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 17期

关键词：

MOTT-HUBBARD; PEIERLS; VIEW;

D O I：

10.1063/1.4803551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Cr doping on electrical and optical properties of CrxV1-xO2 thin films across the metal-insulator transition has been studied. Resistance, Hall effect, and infrared reflectance show that Cr doping systematically increases the transition temperature T-c from 59 degrees C at x=0 to 70 degrees C at x=0.11 with similar transition width and hysteresis from DC to infrared, but the effect appears to saturate. The conductance contrast between insulating and metallic phases decreases with Cr doping. The effects of carrier density and mobility changes across T-c will be discussed. (C) 2013 AIP Publishing LLC.

引用

页数：4

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