Reduction of Spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

被引：0

作者：

Suzuki, Ryoichiro ^{[1
]}

Miyamoto, Tomoyuki ^{[1
]}

Koyama, Fumio ^{[1
]}

机构：

[1] Tokyo Inst Technol, Midori Ku, Microsyst Res Ctr, P&L Lab, Yokohama, Kanagawa 2268503, Japan

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical and morphological property of the InGaAs covered InAs QDs with GaNAs stress compensation layers (SCL) are reported, focusing on the reduction of the spacer thickness for device applications. The suppression of inhomogeneous PL. broadening induced by the compressive strain from lower QD was observed by the GaNAs SCL. This result is effective fin die suppression of the spacer thickness.

引用

页码：252 / 253

页数：2

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