Impact of CMP consumables on copper metallization reliability

被引:3
作者
Obeng, YS [1 ]
Ramsdell, JE
Deshpande, S
Kuiry, SC
Chamma, K
Richardson, KA
Seal, S
机构
[1] Texas Instruments Inc, Dallas, TX 75243 USA
[2] Appalachian State Univ, Boone, NC 28608 USA
[3] Univ Cent Florida, Dept Mech Mat & Aerosp Engn, AMPAC, Orlando, FL 32816 USA
[4] Ctr Tribol Inc, Campbell, CA 95008 USA
[5] Univ Cent Florida, CREOL, Sch Opt, Orlando, FL 32816 USA
关键词
chemical mechanical planarization (CMP); copper; pads; reliability;
D O I
10.1109/TSM.2005.858457
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the past few years, the chemical mechanical planarization (CMP) community has systematically characterized the device reliability issues associated with the introduction of copper metallization into integrated circuit fabrication. To gain further understanding of the impact of CMP processing on device performance, this paper reports in detail the interactions of simulated copper slurries and pristine segmented polyurethanes. These studies clearly show that polyurethane is fundamentally incompatible with some of the chemicals used in copper CMP, such as hydrogen peroxide. Experimental copper polishing data on both polyurethane and polyolefin-based pads are compared. The pad performance differences between the polyurethane and polyolefin-based pads are explained based on the chemistry of the base polymers used in the pad fabrication. These results are incorporated into the design and fabrication of a new class of polyolefins-based application specific pads.
引用
收藏
页码:688 / 694
页数:7
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