Chemical vapor deposition grown graphene on Cu-Pt alloys

被引：15

作者：

Zhang, Yong ^{[1
]}

Fu, Yifeng ^{[1
]}

Edwards, Michael ^{[1
]}

Jeppson, Kjell ^{[1
]}

Ye, Lilei ^{[2
]}

Liu, Johan ^{[1
,3
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Elect Mat & Syst Lab, SE-41296 Gothenburg, Sweden

[2] SHT Smart High Tech AB, SE-41133 Gothenburg, Sweden

[3] Shanghai Univ, SMIT Ctr, Sch Mech Engn & Automat, Shanghai 201800, Peoples R China

来源：

MATERIALS LETTERS | 2017年 / 193卷

基金：

美国国家科学基金会;

关键词：

Graphene; Cu-Pt; Alloy; Chemical vapor deposition; RAMAN-SPECTROSCOPY; LAYER GRAPHENE; CATALYSTS; FILMS;

D O I：

10.1016/j.matlet.2017.01.089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter, the results from a series of experiments where graphene was grown on copper-platinum (Cu-Pt) alloy foils by chemical vapor deposition (CVD) are presented. By using Raman spectroscopy to analyze graphene films grown on Pt-Cu alloy foils with different Cu/Pt weight ratios (75/25, 50/50 and 25/75), we could show how the Cu/Pt weight ratio affected both the quality and the number of layers in the as-synthesized graphene films. Furthermore, graphene growth was shown to occur at temperatures as low as 750 degrees C due to what we believe is the strong catalytic ability of the Cu-Pt alloy foils. By keeping the flow rate of the CH4 precursor gas as low as 1.5 sccm, a low growth rate was obtained where the growth rates of monolayer and bilayer graphene could be controlled by simply adjusting the growth time. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：255 / 258

页数：4

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