Delay analysis of buffer inserted sub-threshold interconnects

被引:7
|
作者
Dhiman, Rohit [1 ]
Chandel, Rajeevan [1 ]
机构
[1] Natl Inst Technol Hamirpur, Elect & Commun Engn Dept, Hamirpur 177005, HP, India
关键词
Buffer; Delay; Interconnects; Metal-oxide semiconductor field-effect transistor (MOSFET); Very large scale integration (VLSI); Variability; Ultra-low power; REPEATER INSERTION; GLOBAL INTERCONNECTS; CIRCUITS; POWER; CROSSTALK; OPERATION; DESIGN; MODELS; LOGIC; VLSI;
D O I
10.1007/s10470-016-0860-8
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, an analysis of interconnect delay minimization by CMOS buffer insertion in sub-threshold regime is presented. Analytical expressions are developed to calculate the total delay and optimum number of buffers required for delay minimization in sub-threshold interconnects. Considering delay minimization by buffer insertion, the effects of voltage-scaling on the delay and optimum number of buffers have been analyzed. It is demonstrated that voltage scaling in sub-threshold regime reduces the number of buffers required to attain the minimum delay. This is one more advantage of voltage-scaling in addition to the usual reduction in power dissipation, in the sense that lesser silicon area is consumed. For a wide variety of typical interconnect loads, analytically obtained results are in good agreement with SPICE extracted results for most of the cases more than 90 %. Finally, the variability analysis of sub-threshold interconnects is investigated using Monte Carlo analysis.
引用
收藏
页码:435 / 445
页数:11
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