Lattice parameters, deviations from Vegard's rule, and E2 phonons in InAlN

被引：48

作者：

Darakchieva, V. ^{[1
,2
]}

Xie, M. -Y. ^{[2
]}

Tasnadi, F. ^{[2
]}

Abrikosov, I. A. ^{[2
]}

Hultman, L. ^{[2
]}

Monemar, B. ^{[2
]}

Kamimura, J. ^{[3
]}

Kishino, K. ^{[4
]}

机构：

[1] Inst Technol & Nucl, P-2686953 Sacavem, Portugal

[2] Linkoping Univ, IFM, SE-58183 Linkoping, Sweden

[3] Sophia Univ, Dept Engn & Appl Sci, Tokyo 1028554, Japan

[4] Japan Sci & Technol Agcy, CREST, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

基金：

瑞典研究理事会;

关键词：

ab initio calculations; aluminium compounds; crystal structure; III-V semiconductors; indium compounds; nanostructured materials; phonon spectra; phonons; Raman spectra; X-ray diffraction;

D O I：

10.1063/1.3056656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice parameters of InxAl1-xN in the whole compositional range are studied using first-principle calculations. Deviations from Vegard's rule are obtained via the bowing parameters, delta(a)=0.0412 +/- 0.0039 A and delta(c)=-0.060 +/- 0.010 A, which largely differ from previously reported values. Implications of the observed deviations from Vegard's rule on the In content extracted from x-ray diffraction are discussed. We also combine these results with x-ray diffraction and Raman scattering studies on InxAl1-xN nanocolumns with 0.627 <= x <= 1 and determine the E-2 phonon frequencies versus In composition in the scarcely studied In-rich compositional range.

引用

页数：3

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