Optical properties of 4H-SiC

被引：22

作者：

Ahuja, R

da Silva, AF

Persson, C

Osorio-Guillén, JM

Pepe, I

Järrendahl, K

Lindquist, OPA

Edwards, NV

Wahab, Q

Johansson, B

机构：

[1] Uppsala Univ, Dept Phys, Condensed Matter Theory Grp, SE-75121 Uppsala, Sweden

[2] Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil

[3] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[4] Motorola Inc, Semicond Prod Sector, Mesa, AZ 85202 USA

[5] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.1429766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies. (C) 2002 American Institute of Physics.

引用

页码：2099 / 2103

页数：5

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