In-Situ Growth of Graphene Films to Improve Sensing Performances

被引：4
|
作者：
Liu, Xinghong [1 ]
Wu, Liang [1 ]
Yu, Xiang [1 ]
Peng, Haoran [1 ]
Xu, Shijue [1 ]
Zhou, Zilong [1 ]
机构：
[1] China Univ Geosci Beijing, Sch Mat Sci & Technol, 29 Xueyuan Rd, Beijing 100083, Peoples R China
来源：
MATERIALS | 2022年 / 15卷 / 21期
关键词：
in situ growth; graphene film; sensing performance; transfer process; CHEMICAL-VAPOR-DEPOSITION; LOW-TEMPERATURE; SENSOR; ELECTRODE; CARBON; OXIDE; GAN; HETEROJUNCTION; PROGRESS; PB(II);
D O I：
10.3390/ma15217814
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Graphene films made by chemical vapor deposition (CVD) are a popular method to modify sensors by virtue of large-scale and reproducibility, but suffer from various surface contamination and structural defects induced during transfer procedures. In-situ growth of graphene films is proposed in this review article to improve sensing performance. Root causes of the surface contamination and structural defects are revealed with several common transfer methods. In-situ approaches are introduced and compared, growing graphene films with clean surfaces and few defects. This allows graphene film to display superior sensing performance for sensor applications. This work may reasonably be expected to offer a good avenue for synthesis of graphene films applicable for sensing applications.
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页数：20
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