Proximity-induced giant spin-orbit interaction in epitaxial graphene on a topological insulator

被引：100
作者：
Jin, Kyung-Hwan [1 ]
Jhi, Seung-Hoon [1 ,2 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Div Adv Mat Sci, Pohang 790784, South Korea
来源：
PHYSICAL REVIEW B | 2013年 / 87卷 / 07期
基金：
新加坡国家研究基金会; 美国国家科学基金会;
关键词：
TRANSPORT; SURFACE;
D O I：
10.1103/PhysRevB.87.075442
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of the graphene-Sb2Te3 heterostructure using density functional theory and tight-binding methods. We show that the epitaxial graphene on Sb2Te3 turns into the quantum spin-Hall phase due to its proximity to the topological-insulating Sb2Te3. It is found that the epitaxial graphene develops a giant spin-orbit gap of about similar to 20 meV, which is about three orders of magnitude larger than that of pristine graphene. We discuss the origin of such enhancement of the spin-orbit interaction and possible outcomes of the spin-Hall phase in graphene. DOI: 10.1103/PhysRevB.87.075442
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页数：6
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