Crystal structure assessment of Ge-Sb-Te phase change nanowires

被引：18

作者：

Rotunno, Enzo ^{[1
]}

Lazzarini, Laura ^{[1
]}

Longo, Massimo ^{[2
]}

Grillo, Vincenzo ^{[1
,3
]}

机构：

[1] IMEM CNR, Parco Area Sci 37-A, I-43124 Parma, Italy

[2] IMM CNR, Lab MDM, Unita Agrate Brianza, I-20864 Agrate Brianza, MB, Italy

[3] CNR NANO, CS3, I-41100 Modena, Italy

来源：

NANOSCALE | 2013年 / 5卷 / 04期

关键词：

ELECTRON-DIFFRACTION; SWITCHING PHENOMENA; GE2SB2TE5; MICROSCOPY;

D O I：

10.1039/c2nr32907g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Further improvement of phase change memory devices based on Ge-Sb-Te alloys imposes the reduction of the active cell dimensions to the nanoscale. We investigate the atomic arrangement of Ge1Sb2Te4 and Ge2Sb2Te5 nanowires. We identify the stacking sequence in each crystal structure by combining the direct observation by High Angle Annular Dark Field imaging and proper simulations. We find out that Ge and Sb atoms randomly share the same lattice sites, although this configuration is considered not stable according to the existing theoretical models elaborated for the bulk material.

引用

页码：1557 / 1563

页数：7

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