Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

被引：8

作者：

Atabaev, I. G. ^{[1
]}

Tin, C. C. ^{[2
]}

Atabaev, B. G.

Saliev, T. M. ^{[1
]}

Bakhranov, E. N. ^{[1
]}

Matchanov, N. A. ^{[1
]}

Lutpullaevl, S. L. ^{[1
]}

Zhang, J. ^{[2
]}

Saidkhanova, N. G. ^{[3
]}

Yuzikaeva, F. R. ^{[3
]}

Nuritdinov, I. ^{[4
]}

Islomov, A. Kh. ^{[4
]}

Amanov, M. Z. ^{[4
]}

Rusli ^{[5
]}

Kumta, A. ^{[5
]}

机构：

[1] Uzbek Acad Sci, Phys Tech Inst, Mavlanov 2B, Tashkent 700084, Uzbekistan

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Uzbek Acad Sci, Arifov Inst Elect, Tashkent 700125, Uzbekistan

[4] Inst Phys Nucl, Tashkent 702132, Uzbekistan

[5] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

3C-SiC; boron diffusion; p-type doping; p-n junction; low temperature diffusion; spreading resistance; electroluminescence; SILICON-CARBIDE; THIN-FILMS;

D O I：

10.4028/www.scientific.net/MSF.600-603.457

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150-1250 degrees C has been found to be about 5.5 x 10(-11)-5.0 x 10(-10) cm(2)/sec and the activation energy of boron diffusion was determined to be about 0.9-1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.

引用

页码：457 / +

页数：2

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