Dielectric relaxation behaviour of ethyl methacrylate and vinyl acetate grafted poly[tetrafluoroethylene-co-(perfluorovinyl ether)] films prepared by direct radiation grafting method

被引:0
作者
Aal, MMA [1 ]
Osman, MBS [1 ]
Mokhtar, SM [1 ]
机构
[1] AIN SHAMS UNIV,UNIV COLL WOMEN,DEPT CHEM,CAIRO,EGYPT
关键词
dielectric constant epsilon'; dielectric loss epsilon''; conductivity; activation energy;
D O I
暂无
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Dielectric relaxation of poly(tetrafluoroethylene-co-perfluorovinyl ether) (PFA) grafted by ethyl methacrylate (EMA) and vinyl acetate (VAc) of different compositions prepared by direct radiation was studied at 0.1, 1, 10, and 100 kHz between 273 and 550 K. Two well resolved relaxation peaks are observed in all films except that with EMA/VAc of compositon 10/90 wt% in which the second peak is masked. In PFA film grafted by EMA/VAc of 50/50 wt% at low temperature the third relaxation was observed. The activation energy for the relaxation was determined from Arrhenius plots. The ac conductivity of the films was investigated and the activation energy of conduction was evaluated. X-Ray diffraction patterns and IR spectra were also measured.
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页码:383 / 391
页数:9
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