Enhanced charge transport properties of rGO-TiO2 based Schottky diode by tuning graphene content

被引：4

作者：

Das, Mrinmay ^{[1
]}

Datta, Joydeep ^{[1
]}

Biswas, Animesh ^{[2
]}

Halder, Soumi ^{[1
]}

Ray, Partha Pratim ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Phys, Kolkata 700032, India

[2] Sreegopal Banerjee Coll, Dept Phys, Mogra 712148, Hooghly, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2019年 / 11卷

关键词：

Metal-semiconductor junction; Schottky barrier diode; rGO-TiO2; Charge transport; COMPOSITE;

D O I：

10.1016/j.matpr.2019.03.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Here we report the fabrication of Al/rGO-TiO2 Schottky barrier diodes (SBD) and the effect of graphene content on charge transport properties. The SBDs showed better performance after graphene incorporation and the best result was obtained for 5% rGO. We employed space charge limited current (SCLC) theory to estimate the carrier mobility, carrier concentration and diffusion length. For 5% rGO, we achieved a carrier mobility of 0.065 cm(2)V(-1)s(-1), which is almost a 15 fold increase on pure TiO2 and the diffusion length improved by 35%. The study demonstrates improved charge transport by tuning rGO content, which can be beneficial for device applications. (C) 2019 Elsevier Ltd. All rights reserved.

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收藏

页码：776 / 781

页数：6

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