High frequency switching of SiC high voltage LJFET

被引：0

作者：

Sheng, Kuang ^{[1
]}

Zhang, Yongxi ^{[1
]}

Su, Ming ^{[1
]}

Yu, Liangchun ^{[1
]}

Zhao, Jian H. ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2008年

关键词：

junction field-effect transistor (JFET); silicon carbide (SiC); power integrated circuits; high frequency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, inductive-load switching of a high voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high frequency, high temperature applications. A new 'capacitor-coupled' gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the SiC HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3MHz, 200V, 1.2A and 250 degrees C with good efficiency, significantly higher than silicon devices with similar voltage ratings.

引用

页码：229 / 232

页数：4

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