Fabrication of MgAl2O4 Thin Films on Ferromagnetic Heusler Alloy Fe2CrSi by Reactive Magnetron Sputtering

被引：4

作者：

Fukatani, Naoto ^{[1
]}

Inagaki, Keima ^{[1
]}

Mari, Kenichiro ^{[1
]}

Fujita, Hirohito ^{[1
]}

Miyawaki, Tetsuta ^{[1
]}

Ueda, Kenji ^{[1
]}

Asano, Hidefumi ^{[1
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

基金：

日本学术振兴会;

关键词：

FE;

D O I：

10.1143/JJAP.51.02BM04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial MgAl2O4 thin films were grown on Heusler alloy Fe2CrSi by reactive magnetron sputtering of a MgAl2 target in an O-2+Ar atmosphere. To grow MgAl2O4 on Fe2CrSi, we inserted a protective layer of MgAl2 between Fe2CrSi and MgAl2O4 to prevent Fe2CrSi from being oxidized. Growth of MgAl2O4 was found to be very sensitive to the MgAl2 thickness and P-O2 during deposition of MgAl2O4. A strong XRD peak of MgAl2O4 (004) was observed with an ultrathin (0.2 nm) MgAl2 layer. The saturation magnetic moment of Fe2CrSi was measured to be 370 emu/cm(3) (1.84 mu B/f.u.) at room temperature and it is expected to have a high spin polarization. The Fe2CrSi/MgAl2O4 heterostructure is promising for use in future spintronic devices. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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