Near-field optical study of AlGaN/GaN quantum-well waveguide

被引：8

作者：

Shakya, J ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 11期

关键词：

D O I：

10.1063/1.1675936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet near-field scanning microscopy and near-field spectroscopy have been employed to study the optical properties of AlGaN/GaN quantum-well waveguides. The divergence of the spontaneous emission emerging from the waveguide exit port was measured. The near-field optical image revealed a half-angle in-plane divergence of 6degrees and vertical divergence of 40degrees. Optical loss of the spontaneous emission inside the waveguide at lambda=350 nm was found to be 106 cm(-1). These parameters are important for the achievement of future III-nitride photonic integrated circuits for various applications. (C) 2004 American Institute of Physics.

引用

页码：1832 / 1834

页数：3