Manipulating carriers' spin polarization in the Heusler alloy Mn2CoAl

被引:9
作者
Zhou, Jian [1 ]
Sa, Baisheng [2 ]
Sun, Zhimei [1 ,3 ]
Si, Chen [1 ,3 ]
Ahuja, Rajeev [4 ]
机构
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350100, Peoples R China
[3] Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China
[4] Uppsala Univ, Dept Phys & Astron, S-75120 Uppsala, Sweden
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
SINGLE-ELECTRON SPIN; FUTURE; PHASE; SPINTRONICS; TRANSITION; SI;
D O I
10.1039/c5ra13673c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report that complete spin polarization and controllable spin polarization of carriers can be simultaneously realized in the Heusler alloy Mn2CoAl simply by applying external pressures based on first-principles studies. At ambient conditions, Mn2CoAl is a ferromagnetic spin-gapless semiconductor (SGS) with complete spin polarization. Under hydrostatic pressures up to 40 GPa, Mn2CoAl undergoes a series of electronic transitions from SGS with spin-up as a conducting channel to a ferromagnetic semiconductor and then to SGS with spin-down as a conducting channel and finally to a half metal, during which the magnetic moment remains as 2 mB. Such rich electronic transitions are attributed to different responses of the spin-up and spin-down electrons under pressure. This work highlights a desirable way to control the carrier's spin polarization and provides a new insight into the electron behavior in Mn2CoAl related Heusler alloys under pressure.
引用
收藏
页码:73814 / 73819
页数:6
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