Depleted fully monolithic active CMOS pixel sensors (DMAPS) in high resistivity 150 nm technology for LHC

被引：8

作者：

Hirono, Toko ^{[1
]}

Barbero, Marlon ^{[2
]}

Barrillon, Pierre ^{[2
]}

Bhat, Siddharth ^{[2
]}

Breugnon, Patrick ^{[2
]}

Caicedo, Ivan ^{[1
]}

Chen, Zongde ^{[2
]}

Daas, Michael ^{[1
]}

Degerli, Yavuz ^{[3
]}

Godiot, Stphanie ^{[2
]}

Guilloux, Fabrice ^{[3
]}

Hemperek, Tomasz ^{[1
]}

Huegging, Fabian ^{[1
]}

Krueger, Hans ^{[1
]}

Pangaud, Patrick ^{[2
]}

Rymaszewski, Piotr ^{[1
]}

Schwemling, Philippe ^{[3
]}

Vandenbroucke, Maxence ^{[3
]}

Wang, Tianyang ^{[1
]}

Wermes, Norbert ^{[1
]}

机构：

[1] Univ Bonn, Nussallee 12, D-53121 Bonn, Germany

[2] Ctr Phys Particules Marseille, 163 Ave Luminy, Marseille, France

[3] CEA Saclay, IRFU, F-91191 Gif Sur Yvette, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2019年 / 924卷

基金：

欧盟地平线“2020”;

关键词：

Depleted monolithic CMOS active pixel sensor; Pixel detector; Silicon detector; Radiation hardness;

D O I：

10.1016/j.nima.2018.10.059

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Depleted monolithic CMOS1 active pixel sensors (DMAPS) have been developed to demonstrate their suitability as pixel detectors in the outer layers of the ATLAS Inner Tracker (ITk) pixel detector in the High-Luminosity Large Hadron Collider (HL-LHC). Two prototypes have been fabricated using a 150 nm CMOS technology on high resistivity (>= 2 k Omega cm) wafers. The chip size of 10 mm x 10 mm is similar to that of the current FE-I3 ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and analog front end circuitry of the DMAPS. The other one is a fully monolithic DMAPS, including fast readout digital logics that handle the required hit rate. To yield a strong homogeneous electric field within the sensor volume, back-side process of the wafer was tested. The prototypes were irradiated with X-rays up to a total ionization dose (TID) of 50 Mrad(SiO2) and with neutrons up to a 1 MeV neutron equivalent fluence of 10(15) n(eq)/cm(2) to test non-ionizing energy loss (NIEL) effects. The analog front end circuitry maintained its performance after TID irradiation, and the hit efficiency at <10(-7) noise occupancy was as high as 98.9% after NIEL irradiation.

引用

页码：87 / 91

页数：5