EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION

被引：9

作者：

Benali, A. ^{[1
]}

Traversa, F. L. ^{[1
]}

Albareda, G. ^{[1
]}

Alarcon, A. ^{[1
]}

Aghoutane, M. ^{[2
]}

Oriols, X. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] Univ Abdelmalek Essaadi, Fac Ciencias, Tetouan 93000, Morocco

来源：

FLUCTUATION AND NOISE LETTERS | 2012年 / 11卷 / 03期

关键词：

High-frequency noise; Ramo-Shockley-Pellegrini theorem; gate-all-around transistor; CHARGE;

D O I：

10.1142/S0219477512410027

中图分类号：

O1 [数学];

学科分类号：

0701 ; 070101 ;

摘要：

By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased.

引用

页数：11

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