1.3 μm GaInNAs/GaAs quantum well lasers and photodetectors

被引：0

作者：

Zhong, P ^{[1
]}

Lin, YW ^{[1
]}

Li, LH ^{[1
]}

Xu, YQ ^{[1
]}

Wei, Z ^{[1
]}

Wu, RH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS | 2001年 / 4580卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

引用

页码：73 / 77

页数：5

共 5 条

[1] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm [J].