A low power 15 GHz frequency divider in a 0.8 μm silicon bipolar production technology

被引：1

作者：

Knapp, H ^{[1
]}

Wilhelm, W ^{[1
]}

Wurzer, M ^{[1
]}

机构：

[1] Siemens AG, Corp Technol, Microelect, D-81730 Munich, Germany

来源：

1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS | 1999年

关键词：

D O I：

10.1109/RFIC.1999.805237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low power static frequency divider with a divide ratio of 8 operating up to 15 GHz while consuming only 22 mA from a 3.6 V to 6 V supply is presented. It is manufactured in a conventional 0.8 mu m silicon bipolar technology with a cut-off frequency of 25 GHz. The chip is mounted in a SOT363 package.

引用

页码：47 / 50

页数：4

共 5 条

[1]

BOCK J, 1996, S VLSI TECHN, P108

[2]

KLOSE H, 1993, IEEE P 1993 BIP BICM, P125

[3] An 18 GHz Si bipolar mold package prescaler [J].

Mineo, M ;

Okamoto, M ;

Hosoki, K ;

Ohba, H .

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, :213-216

[4] APPLICATION-ORIENTED 33-GHZ E/D-PMODFET STATIC PRESCALER FABRICATED USING OPTICAL LITHOGRAPHY [J].

ROHDIN, H ;

JEKAT, H ;

NAGY, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (09) :1695-1697

[5] 42GHz static frequency divider in a Si/SiGe bipolar technology [J].

Wurzer, M ;

Meister, TF ;

Schafer, H ;

Knapp, H ;

Bock, J ;

Stengl, R ;

Aufinger, K ;

Franosch, M ;

Rest, M ;

Moller, M ;

Rein, HM ;

Felder, A .

1997 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - DIGEST OF TECHNICAL PAPERS, 1997, 40 :122-123

← 1 →