On renormalization of the Fermi velocity in epitaxial graphene

被引：16

作者：

Alisultanov, Z. Z. ^{[1
,2
,3
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia

[2] Russian Acad Sci, Dagestan Sci Ctr, Inst Phys, Makhachkala 367003, Dagestan, Russia

[3] Dagestan State Univ, Makhachkala 367000, Dagestan, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2013年 / 39卷 / 07期

关键词：

ELECTRONIC STATES; CHARGE-TRANSFER; METAL; GAS;

D O I：

10.1134/S106378501307002X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Renormalization of the Fermi velocity in epitaxial graphene prepared on the surfaces of semiconductor and metal substrates is considered within a simple model.

引用

页码：597 / 600

页数：4

共 18 条

[1] To the theory of electronic states of epitaxial graphene formed on the surface of a metal substrate [J].

Alisultanov, Z. Z. ;

Garnov, S. V. ;

Meilanov, R. P. .

PHYSICS OF THE SOLID STATE, 2012, 54 (12) :2514-2518

[2] On the theory of electronic states of the "epitaxial graphene-quantum-well film" system [J].

Alisultanov, Z. Z. ;

Meilanov, R. P. .

PHYSICS OF THE SOLID STATE, 2012, 54 (07) :1486-1493

[3] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[4] THE THEORY OF ELECTRONIC TOPOLOGICAL TRANSITIONS [J].

BLANTER, YM ;

KAGANOV, MI ;

PANTSULAYA, AV ;

VARLAMOV, AA .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1994, 245 (04) :159-257

[5] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[6] Electronic transport in two-dimensional graphene [J].

Das Sarma, S. ;

Adam, Shaffique ;

Hwang, E. H. ;

Rossi, Enrico .

REVIEWS OF MODERN PHYSICS, 2011, 83 (02) :407-470

[7] Gaps in the spectrum of epitaxial graphene formed on silicon carbide polytypes [J].

Davydov, S. Yu. .

TECHNICAL PHYSICS LETTERS, 2013, 39 (01) :101-104

[8] On the specific features of the density of states of epitaxial graphene formed on metal and semiconductor substrates [J].

Davydov, S. Yu. .

SEMICONDUCTORS, 2013, 47 (01) :95-104

[9] Electronic states in epitaxial graphene fabricated on silicon carbide [J].

Davydov, S. Yu .

SEMICONDUCTORS, 2011, 45 (08) :1070-1076

[10] On Charge Transfer in the Adsorbed Molecules-Graphene Monolayer-SiC Substrate System [J].

Davydov, S. Yu .

SEMICONDUCTORS, 2011, 45 (05) :618-622

← 1 2 →