Dual-Band Responsivity of AlGaN/GaN MSM UV Photodiode

被引：0
|
作者：
Kwon, Young-Jin [1 ]
Lee, Chang-Ju [1 ]
Kim, Do-kywn [1 ]
Hahm, Sung-Ho [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn Comp Sci, Taegu, South Korea
来源：
2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC) | 2012年
关键词：
component; MSM; dual-band UV sensing; AlGaN/GaN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We proposed a AlGaN/GaN Schottky MSM diode for double-window UV sensing and realized it using three metals. They showed a significantly different value of currents between 300 nm and other wavelengths in both Fowler-Nordheim and Poole-Frenkel plots at the low voltage region, which is attributed to the direct electron conduction to the anode, and/or hole conduction to the cathode from the AlGaN region. Since the ln(I/V) levels is high for the shorter wavelength and low for the longer UV, we may apply to detect the dual windows of UV.
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页数：2
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