Fabrication of thermoelectric materials with bismuth nanowire array

被引：5

作者：

Wang, W ^{[1
]}

Zhang, WL ^{[1
]}

Si, LP ^{[1
]}

Zhang, JZ ^{[1
]}

Gao, JP ^{[1
]}

机构：

[1] Tianjin Univ, Sch Chem Engn, Dept Appl Chem, Tianjin 300072, Peoples R China

来源：

TWENTIETH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICT.2001.979908

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

It has been theoretically verified that the thermoelectric performance can be improved greatly when normal thermoelectric materials possess low dimensional structure. In our lab., Doped N-type and P-type Bi nanowire array thermoelectric materials have been fabricated by electrodeposition technology. The porous alumina films with nano-pore array structure were used as template, and one-dimensional thermoelectric materials dispersed in alumina marix have been obtained, and their composition and structure have been analyzed.

引用

页码：367 / 370

页数：4

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