Site of Er ions in silica layers codoped with Si nanoclusters and Er

被引：68

作者：

Pellegrino, P ^{[1
]}

Garrido, B ^{[1
]}

Arbiol, J ^{[1
]}

Garcia, C ^{[1
]}

Lebour, Y ^{[1
]}

Morante, JR ^{[1
]}

机构：

[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期

关键词：

D O I：

10.1063/1.2190267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silica layers implanted with Si and Er ions to various doses and annealed at 950 degrees C have been investigated by means of energy-filtered transmission electron microscopy (EFTEM) and high annular angle dark field (HAADF). EFTEM analysis reveals Si nanoclusters (Si-nc) with an average size around 3 nm for high Si content (15 at. %) whereas no clusters can be imaged for the lowest Si excess (5 at. %). Raman scattering supports that amorphous Si precipitates are present in all the samples. Moreover, the filtered images show that Er ions appear preferentially located outside the Si-nc. HAADF analysis confirms that the Er atoms form agglomerations of 5-10 nm size when the Er concentration exceeds 1x10(20) cm(-3). This observation correlates well with the reduction of the Er population excitable by Si nanoclusters, in the best case corresponding to 10% of the total. A suitable tuning of the annealing drastically reduces this deleterious effect.

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