The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

被引：7

作者：

Chen, Huang-Chin ^{[1
,3
]}

Chen, Shih-Show ^{[1
,2
]}

Wang, Wei-Cheng ^{[1
]}

Lee, Chi-Young ^{[3
]}

Guo, Jinghua ^{[4
]}

Lin, I-Nan ^{[1
]}

Chang, Ching-Lin ^{[1
]}

机构：

[1] Tamkang Univ, Dept Phys, Tamsui 251, New Taipei, Taiwan

[2] Taipei Coll Maritime Technol, Dept Informat Technol & Mobile Commun, Tamsui 251, New Taipei, Taiwan

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

AIP ADVANCES | 2013年 / 3卷 / 06期

关键词：

X-RAY-ABSORPTION; RADIATION DETECTION DEVICES; CHEMICAL-VAPOR-DEPOSITION; CVD DIAMOND; POLYCRYSTALLINE DIAMOND; FIELD-EMISSION; CARBON-FILMS; ULTRANANOCRYSTALLINE DIAMOND; ELECTRON-EMISSION; NEAR-EDGE;

D O I：

10.1063/1.4811338

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (f(c) = 5.0 x 10(12) ions/cm(2)) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp(2)-bonded phase (pi(*)-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value. (C) 2013 Author(s).

引用

页数：20

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