Effect of proton irradiation on AlGaN/GaN micro-Hall sensors

被引：11

作者：

Abderrahmane, A. ^{[1
]}

Koide, S. ^{[1
]}

Okada, H. ^{[1
,2
]}

Takahashi, H. ^{[1
]}

Sato, S. ^{[3
]}

Ohshima, T. ^{[3
]}

Sandhu, A. ^{[1
,2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan

[3] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

关键词：

RAMAN; MOBILITY; GAN;

D O I：

10.1063/1.4805357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain. (C) 2013 AIP Publishing LLC.

引用

页数：4

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