Effect of proton irradiation on AlGaN/GaN micro-Hall sensors

被引:11
作者
Abderrahmane, A. [1 ]
Koide, S. [1 ]
Okada, H. [1 ,2 ]
Takahashi, H. [1 ]
Sato, S. [3 ]
Ohshima, T. [3 ]
Sandhu, A. [1 ,2 ]
机构
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan
[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan
[3] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan
关键词
RAMAN; MOBILITY; GAN;
D O I
10.1063/1.4805357
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:4
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