Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes

被引：34

作者：

Macedo, Andreia G. ^{[1
]}

de Vasconcelos, Elder A. ^{[3
]}

Valaski, Rogerio ^{[2
]}

Muchenski, Fabio ^{[1
]}

da Silva, Eronides F., Jr.

da Silva, Antonio F. ^{[3
,4
]}

Roman, Lucimara S. ^{[1
]}

机构：

[1] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil

[2] Flexitec Elect Organ Ltda, BR-81531990 Curitiba, Parana, Brazil

[3] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

[4] Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA, Brazil

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 02期

关键词：

Porous silicon; Photoluminescence; Fluorine doped tin oxide; Light-emitting diodes;

D O I：

10.1016/j.tsf.2008.07.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the electrical and optical properties of porous Si (PS) light-emitting diodes using fluorinated tin oxide (FTO) as transparent electrodes. At high forward bias, the current-voltage characteristic is space charge limited. At low forward bias, it follows an exponential law. Whereas the electroluminescence (EL) in devices with non-fluorinated indium-tin oxide electrodes degrades in few minutes, EL intensity in devices with FFO electrodes shows little degradation after 1300 min of operation. This result indicates that the well known beneficial effects of fluorinated species in the improvement of resistance to irradiation and carrier injection degradation in metal-oxide-semiconductor devices might be also observed in PS devices. (C) 2008 Published by Elsevier B.V.

引用

页码：870 / 873

页数：4

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