An asymmetric naphthalimide derivative for n-channel organic field-effect transistors

被引：13

作者：

Wang, Zongrui ^{[1
,2
]}

Zhao, Jianfeng ^{[3
,4
,5
]}

Dong, Huanli ^{[1
,6
]}

Qiu, Ge ^{[1
,6
]}

Zhang, Qichun ^{[3
,7
]}

Hu, Wenping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[4] Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat, Key Lab Flexible Elect, Nanjing 211816, Jiangsu, Peoples R China

[5] Nanjing Tech Univ, Jiangsu Natl Synergist Innovat Ctr Adv Mat, Inst Adv Mat, Nanjing 211816, Jiangsu, Peoples R China

[6] Capital Normal Univ, Dept Chem, Beijing 100048, Peoples R China

[7] Nanyang Technol Univ, Sch Phys & Math Sci, Div Chem & Biol Chem, Singapore 63731, Singapore

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2015年 / 17卷 / 40期

基金：

中国国家自然科学基金;

关键词：

HIGH-ELECTRON-MOBILITY; THIN-FILM MORPHOLOGY; HIGH-PERFORMANCE; PHYSICAL-PROPERTIES; SEMICONDUCTORS; POLYMER; MOLECULES; TRANSPORT; THIENOACENE; BEHAVIOR;

D O I：

10.1039/c5cp01302j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new naphthalene diimide (NDI) derivative with an asymmetric aromatic backbone of 2-tetradecylbenzo[lmn]benzo[4,5]imidazo[2,1-b][3,8] phenanthroline-1,3,6(2H)-trione (IZ0) was designed and synthesized. Low LUMO level, large energy gap, and high thermal stability are characterized for this IZ0 compound. The OFET devices based on an IZ0 semiconductor exhibit typical n-type behavior. Through continuously optimizing the fabrication conditions, high performance n-channel OFETs were fabricated based on IZ0 films and single crystals, with the highest carrier mobility of 0.072 cm(2) V-1 s(-1) and 0.22 cm(2) V-1 s(-1), respectively.

引用

页码：26519 / 26524

页数：6

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