Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications

被引：21

作者：

Lin, Wei-Hsun ^{[1
]}

Wang, Kai-Wei ^{[2
]}

Chang, Shu-Wei ^{[3
]}

Shih, Min-Hsiung ^{[3
]}

Lin, Shih-Yen ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Coll Photon, Tainan 711, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

GROWTH;

D O I：

10.1063/1.4737443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Type-II GaSb/GaAs coupled quantum rings have exhibited two-order-of-magnitude luminescence enhancement and ten-times elongation of recombination lifetime at room temperature as compared with regular rings. The longer lifetime suggests that a significant amount of electrons are confined in coupled rings rather than simply leaking away. These phenomena indicate that type-II nanostructures can be potentially utilized for room-temperature luminescence and carrier storage applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737443]

引用

页数：4

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