Extraction of a nonlinear AC FET model using small-signal S-parameters

被引:17
作者
Vuolevi, JHK [1 ]
Rahkonen, T [1 ]
机构
[1] Univ Oulu, Dept Elect Engn, Elect Lab, FIN-90014 Oulu, Finland
关键词
nonlinear characterization; nonlinearity; pulsed S-parameter measurements; S-parameters; self-heating; third-order intermodulation; Volterra model;
D O I
10.1109/22.999144
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The nonlinearities of an RF FET can be obtained by a set of small-signal circuit elements extracted over a range of terminal voltages and temperatures. This study used pulsed S-parameter measurements on a 3 x 3 dc-bias-point grid at two different temperatures to obtain electrical and electrothermal nonlinearity coefficients up to the third order. The extracted nonlinear ac model can be used in Volterra analysis to gain an insight into distortion mechanisms. The measurement results were in good agreement with the calculated third-order intermodulation values.
引用
收藏
页码:1311 / 1315
页数:5
相关论文
共 8 条
[1]  
Curtice WR, 1999, IEEE MTT-S, P419, DOI 10.1109/MWSYM.1999.779792
[2]   MOS transistor modeling for RF IC design [J].
Enz, CC ;
Cheng, YH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (02) :186-201
[3]   Frequency-domain analysis of strongly nonlinear circuits using a consistent large-signal model [J].
Narhi, T .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (02) :182-192
[4]  
Parker A, 1996, IEEE MTT-S, P1707, DOI 10.1109/MWSYM.1996.512270
[5]  
RIZZOLI V, 1998, IEEE MTT S INT MICR, V3, P1603
[6]  
VUOLEVI J, 2001, P ECCTD AUG 28 31, V2, P41
[7]   Measurement technique for characterizing memory effects in RF power amplifiers [J].
Vuolevi, JHK ;
Rahkonen, T ;
Manninen, JPA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (08) :1383-1389
[8]  
Wambacq P., 1998, Distortion Analysis of Analog Integrated Circuits