Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays

被引：5

作者：

Miao, Cao ^{[1
]}

Honda, Yoshio ^{[1
]}

Yamaguchi, Masahito ^{[1
]}

Amano, Hiroshi ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 03期

关键词：

LIGHT-EMITTING-DIODES; SELECTIVE-AREA GROWTH; GAN; OVERGROWTH; EPITAXY; FIELD;

D O I：

10.7567/JJAP.53.030306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 24 条

[11] Selective area epitaxy of GaN for electron field emission devices
Kapolnek, D
Underwood, RD
Keller, BP
Keller, S
Denbaars, SP
Mishra, UK
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 340 - 343
[12] Highly efficient yellow photoluminescence from {11-22} InGaN multiquantum-well grown on nanoscale pyramid structure
Kim, Taek
Kim, Joosung
Yang, Moon-Seung
Lee, Sangmoon
Park, Youngsoo
Chung, U-In
Cho, Yonghoon
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (24)
[13] FABRICATION OF GAN HEXAGONAL PYRAMIDS ON DOT-PATTERNED GAN/SAPPHIRE SUBSTRATES VIA SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY
KITAMURA, S
HIRAMATSU, K
SAWAKI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B): : L1184 - L1186
[14] Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes
Ko, Young-Ho
Kim, Je-Hyung
Jin, Li-Hua
Ko, Suk-Min
Kwon, Bong-Joon
Kim, Joosung
Kim, Taek
Cho, Yong-Hoon
[J]. ADVANCED MATERIALS, 2011, 23 (45) : 5364 - +
[15] GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
Leute, R. A. R.
Heinz, D.
Wang, J.
Lipski, F.
Meisch, T.
Thonke, K.
Thalmair, J.
Zweck, J.
Scholz, F.
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 101 - 104
[16] Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE
Liu, Chaowang
Shields, Philip A.
Chen, Qin
Allsopp, Duncan W. E.
Wang, Wang Nang
Bowen, Chris R.
Phan, T. -L.
Cherns, David
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01): : 32 - 35
[17] Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting
Liu, Chaowang
Satka, Alexander
Jagadamma, Lethy Krishnan
Edwards, Paul R.
Allsopp, Duncan
Martin, Robert W.
Shields, Philip
Kovac, Jaroslav
Uherek, Frantisek
Wang, Wang
[J]. APPLIED PHYSICS EXPRESS, 2009, 2 (12)
[18] Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
Masui, Hisashi
Nakamura, Shuji
DenBaars, Steven P.
Mishra, Umesh K.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 88 - 100
[19] Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
Ramesh, V.
Kikuchi, A.
Kishino, K.
Funato, M.
Kawakami, Y.
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
[20] Strain-induced polarization in wurtzite III-nitride semipolar layers
Romanov, A. E.
Baker, T. J.
Nakamura, S.
Speck, J. S.
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)

← 1 2 3 →