Coherent topological transport on the surface of Bi2Se3

被引：114

作者：

Kim, Dohun ^{[1
]}

Syers, Paul ^{[1
]}

Butch, Nicholas P. ^{[2
]}

Paglione, Johnpierre ^{[1
]}

Fuhrer, Michael S. ^{[1
,3
]}

机构：

[1] Univ Maryland, Dept Phys, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

[2] Lawrence Livermore Natl Lab, Condensed Matter & Mat Div, Livermore, CA 94550 USA

[3] Monash Univ, Sch Phys, Clayton, Vic 3800, Australia

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

基金：

美国国家科学基金会;

关键词：

SINGLE DIRAC CONE; WEAK ANTILOCALIZATION; INSULATOR; FERMIONS;

D O I：

10.1038/ncomms3040

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The two-dimensional surface of the three-dimensional topological insulator is in the symplectic universality class and should exhibit perfect weak antilocalization reflected in positive weak-field magneto-resistance. Previous studies in topological insulator thin films suffer from high level of bulk n-type doping making quantitative analysis of weak antilocalization difficult. Here we measure the magneto-resistance of bulk-insulating Bi2Se3 thin films as a function of film thickness and gate-tuned carrier density. For thick samples, the magnitude of weak antilocalization indicates two decoupled (top and bottom) symplectic surfaces. On reducing thickness, we observe first a crossover to a single symplectic channel, indicating coherent coupling of top and bottom surfaces via interlayer tunnelling, and second, a complete suppression of weak antilocalization. The first crossover is governed by the ratio of phase coherence time to the inter-surface tunnelling time, and the second crossover occurs when the hybridization gap becomes comparable to the disorder strength.

引用

页数：5

共 33 条

[1] Two-dimensional transport and screening in topological insulator surface states [J].

Adam, S. ;

Hwang, E. H. ;

Das Sarma, S. .

PHYSICAL REVIEW B, 2012, 85 (23)

[2] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[3]

BEENAKKER CWJ, 1991, SOLID STATE PHYS, V44, P1

[4]

Beidenkopf H, 2011, NAT PHYS, V7, P939, DOI [10.1038/NPHYS2108, 10.1038/nphys2108]

[5] Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals [J].

Butch, N. P. ;

Kirshenbaum, K. ;

Syers, P. ;

Sushkov, A. B. ;

Jenkins, G. S. ;

Drew, H. D. ;

Paglione, J. .

PHYSICAL REVIEW B, 2010, 81 (24)

[6] Effects of Magnetic Doping on Weak Antilocalization in Narrow Bi2Se3 Nanoribbons [J].

Cha, Judy J. ;

Claassen, Martin ;

Kong, Desheng ;

Hong, Seung Sae ;

Koski, Kristie J. ;

Qi, Xiao-Liang ;

Cui, Yi .

NANO LETTERS, 2012, 12 (08) :4355-4359

[7] Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].

Chen, J. ;

He, X. Y. ;

Wu, K. H. ;

Ji, Z. Q. ;

Lu, L. ;

Shi, J. R. ;

Smet, J. H. ;

Li, Y. Q. .

PHYSICAL REVIEW B, 2011, 83 (24)

[8] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[9] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[10] Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors [J].

Cho, Sungjae ;

Butch, Nicholas P. ;

Paglione, Johnpierre ;

Fuhrer, Michael S. .

NANO LETTERS, 2011, 11 (05) :1925-1927

← 1 2 3 4 →