Effect of anneling on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by the sol-gel method

被引：0
|
作者：
Guo, DY [1 ]
Wang, YB [1 ]
Yu, J [1 ]
Gao, JX [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2005年 / 20卷 / 04期
关键词：
Bi3.25La0.75Ti3O12; ferroelectric thin film; sol-gel method; leakage current;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi3.25La0.75Ti3O12(BLT) thin films were prepared on Pt/Ti/SO2/Si substrate by the sol-gel method. The effect of annealing on their structures and ferroelectric properties was investigated. The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated awl the single perovskite phase is obtained at 550 degrees C. The remnant polarization increases and the coercive field decreases with the annealing temperature increasing. The leakage current density of the BLT films annealed at 700 V is about 5.8 x 10(-8) A/cm(2) at the electric field of 250 kV/cm.
引用
收藏
页码：20 / 21
页数：2
相关论文
共 50 条
  • [41] Effects of film thickness on microstructure and ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol-gel method
    Liu, Changyong
    Guo, Dongyun
    Wang, Chuanbin
    Shen, Qiang
    Zhang, Lianmeng
    ADVANCED MATERIALS, PTS 1-4, 2011, 239-242 : 1275 - 1278
  • [42] Influence of Bi excess on electrical properties of Bi3.25+xLa0.75Ti3O12+δ thin films
    Kim, JS
    Ahn, CW
    Lee, HJ
    Lee, SY
    Kim, IW
    Bae, JS
    Moon, BK
    Jeong, JH
    FERROELECTRICS, 2005, 328 : 117 - 120
  • [43] Ferroelectric properties of Sr2Bi4Ti5O18 thin films prepared by sol-gel method
    Fang Hong
    Sun Hui
    Zhu Jun
    Mao Xiang-Yu
    Chen Xiao-Bing
    ACTA PHYSICA SINICA, 2006, 55 (06) : 3086 - 3090
  • [44] High energy storage density of Bi3.25La0.75Ti3O12/SrTiO3 multilayer thin films by structural design
    Yue, Wenfeng
    Li, Ting
    Yu, Liang
    Cai, Yali
    Liu, Lixia
    Guo, Quansheng
    Wang, Dawei
    Jia, Tingting
    Yu, Shuhui
    MATERIALS LETTERS, 2023, 333
  • [45] Ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films prepared on LaNiO3 bottom electrode by sol-gel method
    Guo DongYun
    Li MeiYa
    Jun, Liu
    Ling, Pei
    Yu BenFang
    Zhao XingZhong
    Bin, Yang
    Wang YunBo
    Jun, Yu
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2007, 50 (04): : 472 - 477
  • [46] Ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films prepared on LaNiO3 bottom electrode by sol-gel method
    GUO DongYun1
    2 Department of Electronic Science and Technology
    Science in China(Series E:Technological Sciences), 2007, (04) : 472 - 477
  • [47] Ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films prepared on LaNiO3 bottom electrode by sol-gel method
    DongYun Guo
    MeiYa Li
    Jun Liu
    Ling Pei
    BenFang Yu
    XingZhong Zhao
    Bin Yang
    YunBo Wang
    Jun Yu
    Science in China Series E: Technological Sciences, 2007, 50 : 472 - 477
  • [48] Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol-gel method for non-volatile memory
    Guo, Dongyun
    Wang, Chuanbin
    Shen, Qiang
    Zhang, Lianmeng
    Li, Meiya
    Liu, Jun
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (04): : 877 - 881
  • [49] Microstructure and ferroelectric properties of (Bi,Nd)4Ti3O12 thin films fabricated by a sol-gel process
    Kim, SS
    Choi, EK
    Park, MH
    Kim, HJ
    Lee, HS
    Kim, WJ
    Bae, JC
    Song, TK
    Kim, IS
    Song, JS
    Lee, HS
    Lee, JY
    FERROELECTRICS, 2005, 328 : 139 - 143
  • [50] FERROELECTRIC PROPERTIES AND FATIGUE CHARACTERISTICS OF BI4TI3O12 THIN-FILMS BY SOL-GEL PROCESSING
    TOYODA, M
    HAMAJI, Y
    TOMONO, K
    PAYNE, DA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (9B): : 5543 - 5548
12345